Development of low-damage plasma etching processes for preserving AlGaN/GaN heterostructure integrity in MIS HEMT - École Centrale de Lyon
Communication Dans Un Congrès Année : 2022

Development of low-damage plasma etching processes for preserving AlGaN/GaN heterostructure integrity in MIS HEMT

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hal-03831356 , version 1 (26-10-2022)

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Oleh Fesiienko, Camille Petit-Etienne, Maxime Darnon, Ali Soltani, Hassan Maher, et al.. Development of low-damage plasma etching processes for preserving AlGaN/GaN heterostructure integrity in MIS HEMT. Compound Semiconductors weeks, May 2022, Ann Arbor, United States. ⟨10.1109/CSW55288.2022.9930445⟩. ⟨hal-03831356⟩
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