Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor
Abstract
SiC-BJTs with their superior characteristics, including low on-state resistance and their elevated breakdown voltage is very suitable for high-voltage and high-temperature applications with a greater efficiency in sectors [1]-[2]. However, temperature can change the conductivity of the semiconductor material thus affecting its performance [3]-[4]. In this paper static and dynamic electrical characterization are carried out on 4H-SiC BJTs at Ampere Lab. The BJT were fabricated on a 4H-SiC wafer with an epilayer layer of 120 µm thick and doping concentration of 8E14 cm-3. A maximum breakdown voltage of 11 kV was obtained in vacuum conditions with a high voltage source.
Domains
Electric power| Origin | Files produced by the author(s) |
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