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H. von Bardeleben, Jean-Louis Cantin, A. Parisini, A. Bosio, R. Fornari. Conduction mechanism and shallow donor properties in silicon-doped ɛ -G a 2 O 3 thin films: An electron paramagnetic resonance study. Physical Review Materials, 2019, 3 (8), pp.084601. ⟨10.1103/PhysRevMaterials.3.084601⟩. ⟨hal-03924960⟩
Dépôts en texte intégral
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Mots clés
Epitaxy
HfO2
Silicon
Nanoparticles
7550Pp
Nitridation
SiC
Isotopic Tracing
Topological defects
Nuclear reaction analysis
27Ald p&α
Ageing
XRD
Epitaxial growth
Thin films
Adsorbed layers
17Opp
Density functional theory
Thin film
Passivation
Indium oxide
ADSORPTION DESORPTION HYSTERESIS
Aluminum
Multilayer
Nanostructures
Raman spectroscopy
Magnetization curves
Silicon Carbide
8140Ef
Evaluation
Pulsed laser deposition
Defects
ALD
Ion beam analysis
Oxidation
7630Lh
18O
Nickel
EPR
17O
Diffusion
Auger electron spectroscopy AES
Al2O3
NRP
Energy loss
Aluminium
Acoustic propreties of solid
RBS
3C-SiC
Gold
Hysteresis
Pb centers
Rutherford backscattering spectrometry RBS
Channeling
Annealing
X-ray diffraction
Stable isotopic tracing
27Aldp
Ion implantation
Growth
Zinc oxide
2H
Gallium oxide
Silica
Adsorption Isotherms
Charge exchange
Capillary condensation
Nuclear resonance profiling NRP
Interface defects
Oxygen deficiency
Magnetic anisotropy
Topological insulators
AFM
PIXE
Measurement
GaMnAs
17Op
13C
Atomic Layer Deposition ALD
Ferromagnetic resonance
Kossel diffraction
Transparent conductive oxide TCO
Magnetic semiconductors
NRA
Metal-insulator transition
Alloys
27Alda
Silicon carbide
Low energy electron diffraction LEED
AC susceptibility
XPS
Adsorption
Periodic multilayer
Sputtering
15N
Photoluminescence
18O resonance
Acoustic
6855Jk
7550Ee